Impact of Source to Substrate Distance on the Properties of Thermally Evaporated CdS Film

Maitry Dey, N. K. Das, Mrinmoy Dey, S. F. U. Farhad, M. A. Matin, N. Amin

Abstract


In this work, the investigation has been performed of the Cadmium Sulfide (CdS) thin-films that are deposited on the Borosilicate Glass (BSG) using the Thermal Evaporation (TE) method with the different source to substrate distance (SSD), Δd: 8 cm, 10 cm, 12 cm, and 14 cm respectively under high vacuum condition for optimization of SSD The structural and optical properties of as-deposited CdS film analyses by X-ray diffraction (XRD) and UV-VIS-NIR spectroscopy, as well as the three main electrical properties (carrier concentration, carrier mobility, and resistivity), are investigated by the Hall Effect Measurement System (HEMS). The XRD pattern of all the CdS thin-films illustrates the polycrystalline nature with the preferential hexagonal plane along (002). The optical bandgap of the evaporated CdS films is found in the increasing range of 2.37 eV to 2.44 eV with the increases of SSD from 8 cm to 14 cm. The carrier concentration of the CdS films exhibits a rising trend of 3.78—1013 cm-3 to 4.41—1016 cm-3 with decreasing the SSD from 14 cm to8 cm. Moreover, the carrier mobility and resistivity of as-deposited films both follow the declining trend during the decrement of SSD from14 cm to 8 cm. The experimentally founded structural and electrical properties of as-deposited CdS thin-films are sufficient to be used in the applications of photonic devices and thin-film solar cells (TFSC).


Keywords


Thin film; CdS; Thermal Evaporation; Source to Substrate Distance; XRD; UV-VIS-NIR; HEMS.

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DOI (PDF): https://doi.org/10.20508/ijrer.v11i1.11627.g8168

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